Calibration of GaAlAs Semiconductor Diode

Calibration of GaAlAs Semiconductor Diode

The forward voltage of GaAlAs semiconductor diode has been measured in the temperature range 50 K 300 K and for current values between 10 nA and 450 μA. The forward voltage as a function of temperature is least-squares fitted and the coefficients are given. The 1st and 2nd order least-squares fitting has high temperature root between 400 K and 950 K. The presence of the high temperature root in...

NEAR INFRARED SPECTROSCOPY USING GaAlAs-DIODE LASERS

Some spectroscopic techniques based on near infrared djode lasers are discussed with special emphasis on molecular spectroscopy. The semiconductor lasers provide for not only cheap coherent light sources of high quality, but also for new possibilities in experimental physics.

Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities.

Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10(4). Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy inc...

Spatial Mode Matching Efficiencies for Heterodyned GaAlAs Semiconductor Lasers

High spatial mode matching efficiencies are experimentally demonstrated when open-loop frequency-stabilized GaAlAs semiconductor lasers are heterodyned on silicon p-i-n detectors. Repeatable values of 75 percent are obtained using two independent lasers. The mode matching efficiency increases to 90 percent when a single modulated laser is self-heterodyned using an unequal path length MachZehnde...

Multiwavelength Modelocked Semiconductor Diode Laser